Title :
A CMOS bandgap reference circuit with sub-1-V operation
Author :
Banba, Hironori ; Shiga, Hitoshi ; Umezawa, Akira ; Miyaba, Takeshi ; Tanzawa, Toru ; Atsumi, Shigeru ; Sakui, Koji
Author_Institution :
Toshiba Corp., Yokohama, Japan
fDate :
5/1/1999 12:00:00 AM
Abstract :
This paper proposes a CMOS bandgap reference (BGR) circuit, which can successfully operate with sub-1-V supply, In the conventional BGR circuit, the output voltage Vref is the sum of the built-in voltage of the diode Vf and the thermal voltage VT of kT/q multiplied by a constant. Therefore, Vref is about 1.25 V, which limits a low supply-voltage operation below 1 V. Conversely, in the proposed BGR circuit, Vref has been converted from the sum of two currents; one is proportional to Vf and the other is proportional to VT. An experimental BGR circuit, which is simply composed of a CMOS op-amp, diodes, and resistors, has been fabricated in a conventional 0.4-μm flash memory process. Measured Vref is 518±15 mV (3σ) for 23 samples on the same wafer at 27-125°C
Keywords :
CMOS analogue integrated circuits; operational amplifiers; reference circuits; 0.4 micron; 1.25 V; 27 to 125 degC; 503 to 533 mV; CMOS bandgap reference circuit; CMOS op-amp; built-in voltage; flash memory process; low supply-voltage operation; output voltage; thermal voltage; CMOS memory circuits; CMOS process; Microelectronics; Operational amplifiers; Photonic band gap; Proportional control; Resistors; Semiconductor diodes; Temperature; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
