A negative Vth cell architecture for highly scalable, excellently noise-immune, and highly reliable NAND flash memories

A new, negative V_th cell architecture is proposed where both the erased and the programmed state have negative V_th. This architecture realizes highly scalable, excellently noise-immune, and highly reliable NAND flash memories. The program disturbance that limits the scaling of a local oxidation of silicon (LOCOS) width in a conventional NAND-type cell is drastically reduced. As a result, the scaling limit of the LOCOS width decreases from 0.56 to 0.45 μm, which leads to 20% isolation width reduction. The proposed cell is essential for the future scaled shallow trench isolated cells because improved program disturb characteristics can be obtained irrespective of the process technology or feature size. New circuit techniques, such as a PMOS drive column latch and a V_cc-bit-line shield sensing method are also utilized to realize the proposed cell operation. By using these novel circuit technologies, array noise, such as a source-line noise and an inter bit line capacitive coupling noise, are eliminated. Consequently, the V_th fluctuation due to array noise is reduced from 0.7 to 0.1 V, and the V_th distribution width decreases from 1.2 to 0.6 V. In addition to the smaller cell size and the high noise immunity, the proposed cell improves device reliability. The read disturb time increases by more than three orders of magnitude, and a highly reliable operation can be realized