DocumentCode :
1501099
Title :
Complete On-Wafer Noise-Figure Characterization of 60-GHz Differential Amplifiers
Author :
Tiemeijer, Luuk F. ; Pijper, Ralf M T ; Van der Heijden, Edwin
Author_Institution :
NXP-TSMC Res. Centre, Eindhoven, Netherlands
Volume :
58
Issue :
6
fYear :
2010
fDate :
6/1/2010 12:00:00 AM
Firstpage :
1599
Lastpage :
1608
Abstract :
In this paper, we show that the differential noise figure of differential amplifiers is better measured directly by using baluns rather than be derived from single-ended measurements. For on-wafer measurements at 60 GHz, this can best be done using RF probes with integrated baluns. To extract the full 4 × 4 noise correlation matrix needed to predict the circuit behavior under any operating condition, this needs to be extended with at least one single-ended noise-figure measurement taken on an individual amplifier. For the experimental two-stage differential amplifier realized in 45-nm node CMOS studied in this paper, we found a noise figure of 3.2 dB. This is, to the best of our knowledge, the lowest noise figure reported at 60 GHz in any CMOS technology thus far.
Keywords :
CMOS integrated circuits; baluns; differential amplifiers; integrated circuit measurement; integrated circuit noise; CMOS technology; RF probe; baluns; circuit behavior; differential amplifier; differential noise figure; frequency 60 GHz; noise correlation matrix; noise figure 3.2 dB; on-wafer measurement; on-wafer noise-figure characterization; single-ended noise-figure measurement; size 45 nm; 45-nm node CMOS; 4 $,times,$4 noise correlation matrix; integrated circuits; on-wafer microwave differential noise-figure measurements;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2010.2049167
Filename :
5471102
Link To Document :
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