Degradation of DC characteristics of InGaAs/InP single heterojunction bipolar transistors under electron irradiation

Author

Bandyopadhyay, A. ; Subramanian, S. ; Chandrasekhar, S. ; Dentai, Andrew G. ; Goodnick, Stephen M.

Author_Institution

Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA

Volume

46

Issue

5

fYear

1999

fDate

5/1/1999 12:00:00 AM

Firstpage

840

Lastpage

849

Abstract

The effects of high-energy (~1 MeV) electron irradiation on the dc characteristics of InGaAs/InP single heterojunction bipolar transistors (SHBT´s) are investigated. The device characteristics do not show any significant change for electron doses <10¹⁵/cm². For higher doses, devices show a decrease in collector current, a degradation of common-emitter current gain, an increase in collector saturation voltage and an increase in the collector output conductance. A simple SPICE-like device model is developed to describe the dc characteristics of SHBT´s. The model parameters extracted from the measured dc characteristics of the devices before and after irradiation are used to get an insight into the physical mechanisms responsible for the degradation of the devices

Keywords

III-V semiconductors; SPICE; electron beam effects; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; 1 MeV; DC characteristics; InGaAs-InP; InGaAs/InP single heterojunction bipolar transistor; SPICE model; device degradation; electron irradiation; Degradation; Electric variables; Electrons; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Neutrons; Semiconductor devices; Thermal conductivity;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.760388

Filename

760388