Dual-material gate (DMG) field effect transistor

Author

Long, Wei ; Ou, Haijiang ; Kuo, Jen-Min ; Chin, Ken K.

Author_Institution

Dept. of Electr. & Comput. Eng., New Jersey Inst. of Technol., Newark, NJ, USA

Volume

46

Issue

5

fYear

1999

fDate

5/1/1999 12:00:00 AM

Firstpage

865

Lastpage

870

Abstract

A generic new type of field effect transistor (FET), the dual material gate (DMG) FET, is proposed and demonstrated. The gate of the DMGFET consists of two laterally contacting materials with different work functions. This novel gate structure takes advantage of material work function difference in such a way that the threshold voltage near the source is more positive than that near the drain (for n-channel FET, the opposite for p-channel FET), resulting in a more rapid acceleration of charge carriers in the channel and a screening effect to suppress short-channel effects. Using the heterostructure FET as a vehicle, the principle, computer simulation results, design guidelines, processing, and characterization of the DMGFET are discussed in detail

Keywords

field effect transistors; work function; DMGFET; asymmetric transistor; charge carrier screening; computer simulation; dual material gate field effect transistor; short channel effect; threshold voltage; work function; Acceleration; Charge carriers; Computer simulation; Electron mobility; FETs; Guidelines; MESFET integrated circuits; Process design; Threshold voltage; Vehicles;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.760391

Filename

760391