Title :
Modeling the short-channel threshold voltage of a novel vertical heterojunction pMOSFET
Author :
Collaert, Nadine ; De Meyer, Kristin
Author_Institution :
IMEC, Heverlee, Belgium
fDate :
5/1/1999 12:00:00 AM
Abstract :
Analytical modeling of the threshold voltage of a Si1-xGex/Si heterojunction pMOSFET has been performed using a quasi-two-dimensional (quasi-2-D) approach for the calculation of the potential. It is shown that the use of Si1-x Gex in the source region leads to an improvement in the short-channel behavior of deep submicron pMOSFETs. The VT roll-off can be substantially decreased by introducing a material dependent barrier between source and channel. Furthermore it will be proven that this advantage will become stronger when channel lengths are decreased toward the deep submicron regime
Keywords :
Ge-Si alloys; MOSFET; semiconductor device models; semiconductor materials; Si1-xGex/Si vertical heterojunction pMOSFET; SiGe-Si; analytical model; quasi-two-dimensional simulation; short-channel deep submicron device; threshold voltage; Analytical models; Doping; Helium; Heterojunctions; Lithography; MOSFET circuits; Performance analysis; Semiconductor materials; Semiconductor process modeling; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
