Three-dimensional modeling of the erasing operation in a submicron flash-EEPROM memory cell

Author

Lorenzini, Martino ; Vissarion, Radu ; Rudan, Massimo

Author_Institution

Dipt. di Elettronica Inf. e Sistemistica, Bologna Univ., Italy

Volume

46

Issue

5

fYear

1999

fDate

5/1/1999 12:00:00 AM

Firstpage

975

Lastpage

983

Abstract

This paper addresses the modeling of the erasing operation in a realistic flash-EEPROM cell, based on a three-dimensional (3-D) device-simulation code in which models for higher-order physical effects have been incorporated, specifically, the Fowler-Nordheim (FN) and the band-to-band tunneling. The ability of the code to consistently determine the floating-gate potential is shown. The distribution of the band-to-band generation rate within the device during the erasing process is investigated. The experimental characteristics of the erasing process of a memory cell are successfully reproduced

Keywords

flash memories; integrated circuit modelling; tunnelling; 3D device simulation code; Fowler-Nordheim tunneling; band-to-band tunneling; erasing operation; floating gate potential; submicron flash EEPROM memory cell; three-dimensional model; Analytical models; Capacitance; Computational modeling; Geometry; MOS devices; Nonvolatile memory; Numerical analysis; Predictive models; Semiconductor devices; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.760406

Filename

760406