Title :
Numerical modeling of linear doping profiles for high-voltage thin-film SOI devices
Author :
Zhang, Shengdong ; Sin, Johnny K O ; Lai, Tommy M L ; Ko, Ping K.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
fDate :
5/1/1999 12:00:00 AM
Abstract :
A numerical model for obtaining linear doping profiles in the drift region of high-voltage thin-film SOI devices is proposed and experimentally verified. Breakdown voltage in excess of 612 V on LDMOS transistors with 0.15-μm SOI layer, 2-μm buried oxide, and 50-μm drift region is designed and demonstrated using this model. Theoretical and experimental dependence of the breakdown voltage on the drift region length are compared. Good agreement between the simulation and experimental results are obtained. Dependence of the breakdown voltage on the doping density and doping concentration slope in the linearly doped drift region is also investigated experimentally. Results indicate that an optimum concentration slope is needed in order to optimize the breakdown voltage in the thin-film SOI devices with a linear doping drift region. Finally, a 600-V CMOS compatible thin-film SOI LDMOS process is also described
Keywords :
doping profiles; numerical analysis; power MOSFET; power integrated circuits; semiconductor device breakdown; semiconductor device models; silicon-on-insulator; thin film transistors; 0.15 micron; 2 micron; 50 micron; 600 V; 612 V; CMOS compatible thin-film SOI LDMOS process; HV thin-film SOI devices; LDMOS transistors; Si; breakdown voltage; buried oxide; doping concentration slope; doping density; drift region; drift region length; high-voltage SOI devices; linear doping profiles; linearly doped drift region; numerical modeling; CMOS process; Doping profiles; Impurities; Numerical models; Semiconductor device modeling; Semiconductor process modeling; Thin film circuits; Thin film devices; Thin film transistors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
