Title :
Analysis of CIC NPT IGBT´s turn-off operations for high switching current level
Author :
Lefebvre, Stéphane ; Miserey, Francis
Author_Institution :
ECS ENSEA, Cergy-Pontoise, France
fDate :
5/1/1999 12:00:00 AM
Abstract :
For a high switching current level during IGBT´s turn-off process, the simultaneous presence of high current density and high voltage can lead to avalanche generation. A one-dimensional (1-D) analytical model describing the voltage reapplication phase is presented for snubberless turn-off operations with CIC NPT IGBT´s. Without avalanche generation, voltage rate of rise dVAK/dt at turn-off remains constant. Avalanche generation is investigated on the basis of experimental measurements in combination with numerical simulations. The avalanche mechanism generates electrons in the space charge region delaying the sweeping-out process and increasing the turn-off losses. The avalanche generation can be avoided when the gate drive is slowed even though turn-off losses increase
Keywords :
avalanche breakdown; current density; impact ionisation; insulated gate bipolar transistors; losses; power semiconductor switches; power transistors; semiconductor device breakdown; semiconductor device models; space charge; 1D analytical model; CIC NPT IGBT; avalanche generation; charge injection controlled device; high current density; high switching current level; high voltage; nonpunch through IGBT; snubberless turnoff operations; space charge region; turn-off operations; turnoff losses; voltage reapplication phase; Analytical models; Anodes; Charge carrier processes; Current density; Electron emission; Electron mobility; Insulated gate bipolar transistors; Numerical simulation; Thyristors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
