A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part II: Ultrathin Silicon Films

Author

Silvestri, Luca ; Reggiani, Susanna ; Gnani, Elena ; Gnudi, Antonio ; Baccarani, Giorgio

Author_Institution

Dept. of Electron. (DEIS), Univ. of Bologna, Bologna, Italy

Volume

57

Issue

7

fYear

2010

fDate

7/1/2010 12:00:00 AM

Firstpage

1575

Lastpage

1582

Abstract

In this paper, together with the accompanying Part I, an easy-to-implement electron mobility model that accurately predicts low-field mobility in bulk MOSFETs and UTB-SOI FETs fabricated on different crystal orientations is developed. In Part I, the general features of the model have been presented. In this Part II, the effects induced by extremely small silicon thicknesses are addressed. These effects include the scattering induced by interface states and silicon thickness fluctuations, intervalley-phonon scattering suppression, and surface optical phonons. Besides, corrections necessary for double-gate FETs are considered. This allows the validity of the model presented in Part I to be extended to single- and double-gate FETs with silicon thicknesses as small as about 2.5 nm.

Keywords

MOSFET; electron mobility; silicon-on-insulator; Double-Gate n-MOSFET; channel orientation; crystal orientation; double-gate FET; electron mobility model; interface states; intervalley-phonon scattering suppression; low field mobility model; silicon thickness fluctuation; surface optical phonons; ultrathin body SOI; ultrathin silicon films; Double-gate FETs; Electron mobility; Fluctuations; Interface states; MOSFET circuits; Optical scattering; Predictive models; Semiconductor films; Silicon; Ultraviolet sources; Crystal orientation; Mobility model; SOI MOSFETs; ultrathin silicon;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2010.2049211

Filename

5471165