Title :
Reduced short-channel effects in submicron N-HIGFET technology using sidewalls
Author :
Roger, M. ; Touirat, M. ; Ajram, S. ; Pesant, J.C. ; Linh, N.T. ; Fawaz, H. ; Salmer, G.
Author_Institution :
Dept. Hyperfrequences et Semicond., Inst. d´Electron. et de Microelectron. du Nord, Villeneuve, France
fDate :
5/1/1999 12:00:00 AM
Abstract :
In this letter, 0.35 μm gate length pseudomorphic AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect-transistors (HIGFETs) have been fabricated on GaAs. The short-channel effects have been reduced by using a sidewall technology. A high current density and a high transconductance were obtained, reflectively, 510 mA/mm and 550 mS/mm, in addition to a high value of extrinsic current gain cutoff frequency FT=44 GHz. The dependencies of subthreshold current, threshold voltage, and output conductance on gate length have been emphasised.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; insulated gate field effect transistors; 0.35 micron; AlGaAs-InGaAs-GaAs; current density; extrinsic current gain cutoff frequency; output conductance; pseudomorphic heterostructure insulated gate field effect transistor; self-aligned operation; short channel effect; sidewall technology; submicron N-HIGFET; subthreshold current; threshold voltage; transconductance; Aluminum; Electron mobility; Fabrication; Gallium arsenide; Implants; Indium gallium arsenide; Insulation; Molecular beam epitaxial growth; Subthreshold current; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
