Title :
Electrical properties of Ga-implanted Si p/sup +/-n shallow junctions fabricated by low-temperature rapid thermal annealing
Author :
Lin, C.-M. ; Steckl, Andrew J. ; Chow, T. Paul
Author_Institution :
Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
p/sup +/-n shallow-junction diodes were fabricated using on-axis Ga/sup 69/ implantation into crystalline and preamorphized Si, at energies of 25-75 keV for a dose of 1*10/sup 15//cm/sup 2/, which is in excess of the dosage (2*10/sup 14//cm/sup 2/) required to render the implanted layer amorphous. Rapid thermal annealing at 550-600 degrees C for 30 s resulted in the solid-phase epitaxial (SPE) regrowth of the implanted region accompanied by high Ga activation and shallow junction (60-130 nm) formation. Good diode electrical characteristics for the Ga implantation into crystalline Si were obtained; leakage current density of 1-1.5 nA/cm/sup 2/ and ideality factor of 1.01-1.03. Ga implantation into preamorphized Si resulted in a two to three times decrease in sheet resistance, but a leakage current density orders of magnitude higher.<>
Keywords :
amorphous semiconductors; annealing; elemental semiconductors; gallium; ion implantation; leakage currents; p-n homojunctions; semiconductor diodes; semiconductor doping; silicon; solid phase epitaxial growth; 25 to 75 keV; 30 s; 550 to 600 degC; 60 to 130 nm; RTA; Si:Ga; diode electrical characteristics; ideality factor; leakage current density; low-temperature rapid thermal annealing; on-axis Ga/sup 69/ implantation; p/sup +/-n shallow junctions; preamorphized Si; semiconductor diodes; solid phase epitaxial regrowth; Amorphous materials; Crystallization; Leakage current; Lithography; MOSFET circuits; Rapid thermal annealing; Semiconductor diodes; Solids; Substrates; Systems engineering and theory;
Journal_Title :
Electron Device Letters, IEEE
