• DocumentCode
    1501588
  • Title

    High-Performance Visible Semiconductor Lasers Operating at 630 nm

  • Author

    Qiu, Bocang ; Kowalski, O.P. ; McDougall, Stewart ; Schmidt, B. ; Marsh, John H.

  • Author_Institution
    Intense Ltd., Glasgow, UK
  • Volume
    2
  • Issue
    4
  • fYear
    2010
  • Firstpage
    563
  • Lastpage
    570
  • Abstract
    A tensile-strained InGaP quantum-well laser structure operating around 630 nm has been designed. The structure offers low threshold current and beam divergence (19° full-width at half-maximum (FWHM) or 34° at 1/e2) simultaneously by incorporating a V-profile layer within the waveguide. Single-mode lasers (630 nm) were fabricated and tested. The threshold current for coated 1-mm-long and 3-m-wide ridge lasers is only 30 mA, and the slope efficiency is 1.04 W/A. This level of performance makes the lasers ideal for display applications.
  • Keywords
    III-V semiconductors; indium compounds; quantum well lasers; semiconductor lasers; InGaP; wavelength 630 nm; Displays; Laser beams; Optical design; Optical materials; Optical waveguides; Quantum well lasers; Semiconductor lasers; Semiconductor materials; Threshold current; Waveguide lasers; InGaAlP; Red lasers; low beam divergence;
  • fLanguage
    English
  • Journal_Title
    Photonics Journal, IEEE
  • Publisher
    ieee
  • ISSN
    1943-0655
  • Type

    jour

  • DOI
    10.1109/JPHOT.2010.2051022
  • Filename
    5471171
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1501588