Title :
High-Performance Visible Semiconductor Lasers Operating at 630 nm
Author :
Qiu, Bocang ; Kowalski, O.P. ; McDougall, Stewart ; Schmidt, B. ; Marsh, John H.
Author_Institution :
Intense Ltd., Glasgow, UK
Abstract :
A tensile-strained InGaP quantum-well laser structure operating around 630 nm has been designed. The structure offers low threshold current and beam divergence (19° full-width at half-maximum (FWHM) or 34° at 1/e2) simultaneously by incorporating a V-profile layer within the waveguide. Single-mode lasers (630 nm) were fabricated and tested. The threshold current for coated 1-mm-long and 3-m-wide ridge lasers is only 30 mA, and the slope efficiency is 1.04 W/A. This level of performance makes the lasers ideal for display applications.
Keywords :
III-V semiconductors; indium compounds; quantum well lasers; semiconductor lasers; InGaP; wavelength 630 nm; Displays; Laser beams; Optical design; Optical materials; Optical waveguides; Quantum well lasers; Semiconductor lasers; Semiconductor materials; Threshold current; Waveguide lasers; InGaAlP; Red lasers; low beam divergence;
Journal_Title :
Photonics Journal, IEEE
DOI :
10.1109/JPHOT.2010.2051022
