Title :
Carrier lifetime extraction in fully depleted dual-gate SOI devices
Author :
Ernst, T. ; Vandooren, A. ; Cristoloveanu, S. ; Colinge, J.P. ; Flandre, D.
Author_Institution :
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
fDate :
5/1/1999 12:00:00 AM
Abstract :
A new method for extracting the carrier recombination lifetime in dual-gate silicon-on-insulator (SOI) structures is proposed. The experiment, model, and numerical simulations indicate that an excess forward current is obtained when carrier recombination occurs in the whole film volume.
Keywords :
MOSFET; carrier lifetime; electron-hole recombination; leakage currents; semiconductor device models; silicon-on-insulator; carrier lifetime extraction; carrier recombination; excess forward current; film volume; fully depleted dual-gate SOI devices; numerical simulations; Charge carrier lifetime; Doping; Electric potential; Pulse measurements; Radiative recombination; Semiconductor diodes; Semiconductor films; Silicon on insulator technology; Spontaneous emission; Voltage;
Journal_Title :
Electron Device Letters, IEEE
