DocumentCode
1501590
Title
Carrier lifetime extraction in fully depleted dual-gate SOI devices
Author
Ernst, T. ; Vandooren, A. ; Cristoloveanu, S. ; Colinge, J.P. ; Flandre, D.
Author_Institution
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
Volume
20
Issue
5
fYear
1999
fDate
5/1/1999 12:00:00 AM
Firstpage
209
Lastpage
211
Abstract
A new method for extracting the carrier recombination lifetime in dual-gate silicon-on-insulator (SOI) structures is proposed. The experiment, model, and numerical simulations indicate that an excess forward current is obtained when carrier recombination occurs in the whole film volume.
Keywords
MOSFET; carrier lifetime; electron-hole recombination; leakage currents; semiconductor device models; silicon-on-insulator; carrier lifetime extraction; carrier recombination; excess forward current; film volume; fully depleted dual-gate SOI devices; numerical simulations; Charge carrier lifetime; Doping; Electric potential; Pulse measurements; Radiative recombination; Semiconductor diodes; Semiconductor films; Silicon on insulator technology; Spontaneous emission; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.761017
Filename
761017
Link To Document