The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers

Author

Goh, W.L. ; Raza, S.H. ; Montgomery, J.H. ; Armstrong, B.M. ; Gamble, H.S.

Author_Institution

Dept. of Electr. & Electron. Eng., Queen´s Univ., Belfast, UK

Volume

20

Issue

5

fYear

1999

fDate

5/1/1999 12:00:00 AM

Firstpage

212

Lastpage

214

Abstract

Results are reported on the performance of diffused p/sup +/n diode structures manufactured on a novel silicon-on-metal-on-insulator (SMI) substrate. This substrate consists of a thin single crystal silicon layer on top of a tungsten disilicide covered oxidized silicon wafer. The diodes show excellent characteristics with an exponential current-voltage (I-V) relationship over nine orders of magnitude and an ideality factor of 1.005, under forward bias conditions. The reverse leakage current is low with a minority carrier lifetime of typically 500 μs. The diodes show no evidence of stress induced defects or degraded performance due to W migration during processing. The SMI substrate is therefore shown to be compatible with standard manufacturing processes.

Keywords

carrier lifetime; isolation technology; leakage currents; minority carriers; p-n junctions; semiconductor diodes; silicon-on-insulator; 500 mus; Si-WSi/sub 2/-SiO/sub 2/; buried metallic layers; dielectrically isolated substrates; diffused p/sup +/n diode structures; exponential current-voltage relationship; forward bias conditions; ideality factor; minority carrier lifetime; reverse leakage current; silicon-on-metal-on-insulator substrate; standard manufacturing processes; Charge carrier lifetime; Circuits; Dielectric substrates; Diodes; Isolation technology; Leakage current; Manufacturing; Silicon on insulator technology; Tungsten; Wafer bonding;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.761018

Filename

761018