Title :
Hydrogenation of polysilicon thin-film transistor in a planar inductive H/sub 2//Ar discharge
Author :
Yeh, Ching-Fa ; Chen, Tai-Ju ; Liu, Chung ; Gudmundsson, Jon T. ; Lieberman, Michael A.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
5/1/1999 12:00:00 AM
Abstract :
A planar inductive discharge is used to hydrogenate polysilicon thin-film transistors (poly-Si TFTs). Experimental results indicate that inductive discharges operate at higher plasma densities, thereby capable of shortening the hydrogenation time, in addition, to promote the ionization of hydrogen, Ar gas is also introduced to H/sub 2/ plasma during hydrogenation. Furthermore, we discuss the mechanism of Ar enhanced hydrogenation and the characteristics of H/sub 2//Ar mixed plasma. Moreover, the post-hydrogenation anneal is utilized to further enhance passivation efficiency and improve the reliability of poly-Si TFTs.
Keywords :
annealing; elemental semiconductors; hydrogenation; passivation; plasma materials processing; semiconductor device reliability; silicon; thin film transistors; Si:H; annealing; hydrogenation; inductively coupled plasma; passivation; planar inductive H/sub 2//Ar discharge; polysilicon thin film transistor; reliability; Argon; Hydrogen; Plasma density; Plasma devices; Plasma immersion ion implantation; Plasma materials processing; Plasma properties; Plasma sources; Plasma temperature; Thin film transistors;
Journal_Title :
Electron Device Letters, IEEE
