Title :
Direct ion-implanted 0.12 μm GaAs MESFET with fT of 121 GHz and fmax of 160 GHz
Author :
Hsia, H. ; Tang, Z. ; Caruth, D. ; Becher, D. ; Feng, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
5/1/1999 12:00:00 AM
Abstract :
An 0.12 μm gate length direct ion-implanted GaAs MESFET exhibiting excellent DC and microwave characteristics has been developed. By using a shallow implant schedule to form a highly-doped channel and an AsH3 overpressure annealing system to optimize the shallow dopant profile, the GaAs MESFET performance was further improved. Peak transconductance of 500 mS/mm was obtained at I/sub ds/=380 mA/mm. A noise figure of 0.9 dB with associated gain of 8.9 dB were achieved at 18 GHz. The current gain cutoff frequency fmax of 160 GHz indicates the suitability of this 0.12 μm T-gate device for millimeter-wave IC applications.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; annealing; doping profiles; gallium arsenide; ion implantation; microwave field effect transistors; millimetre wave field effect transistors; 0.12 micron; 0.9 dB; 121 GHz; 160 GHz; 18 GHz; 8.9 dB; DC characteristics; GaAs; T-gate device; current gain cutoff frequency; direct ion-implanted MESFET; highly-doped channel; microwave characteristics; millimeter-wave IC applications; overpressure annealing system; peak transconductance; shallow dopant profile; shallow implant schedule; Annealing; Application specific integrated circuits; Ash; Cutoff frequency; Gain; Gallium arsenide; Implants; MESFETs; Noise figure; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
