DocumentCode :
1501872
Title :
1.55- 
m GaNAsSb-Based Photoconductive Switch for Microwave Switching
Author :
Tan, Kian Hua ; Tripon-Canseliet, Charlotte ; Faci, Salim ; Pagies, Antoine ; Zegaoui, Malek ; Loke, Wan Khai ; Wicaksono, Satrio ; Yoon, Soon Fatt ; Magnin, Vincent ; Decoster, Didier ; Chazelas, Jean
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Volume :
22
Issue :
15
fYear :
2010
Firstpage :
1105
Lastpage :
1107
Abstract :
We report a GaNAsSb-based photoconductive switch for microwave switching application. The GaNAsSb layer was grown by molecular beam epitaxy in conjunction with a radio-frequency plasma-assisted nitrogen source and a valved antimony cracker cell. The switch shows a maximum ON-OFF ratio of 9 dB at 1.5 GHz under 1.55-m laser excitation at 80 mW. The switch also shows a positive ON-OFF ratio up to 10 GHz. This is the first successful demonstration of a photoconductive switch for microwave switching application under 1.55- m wavelength excitation. Further analysis suggests that the high contact resistance may degrade the performance of the photoconductive switch.
Keywords :
III-V semiconductors; arsenic compounds; gallium compounds; microwave switches; molecular beam epitaxial growth; nitrogen compounds; photoconducting switches; GaNAsSb; frequency 1.5 GHz; frequency 10 GHz; microwave switching; molecular beam epitaxy; photoconductive switch; power 80 mW; radio-frequency plasma-assisted nitrogen source; valved antimony cracker cell; wavelength 1.55 mum; Dilute–nitride; GaNAsSb; molecular beam epitaxy; photoconductive switch;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2010.2050470
Filename :
5471214
Link To Document :
