A Power-Efficient Voltage Upconverter for Embedded EEPROM Application

Author

Baek, Jong-Min ; Chun, Jung-Hoon ; Kwon, Kee-Won

Author_Institution

Dept. of Electr. & Comput. Eng., Sungkyunkwan Univ., Suwon, South Korea

Volume

57

Issue

6

fYear

2010

fDate

6/1/2010 12:00:00 AM

Firstpage

435

Lastpage

439

Abstract

This brief presents a power-efficient voltage upconverter applicable to a mobile electrically erasable programmable read-only memory (EEPROM). The power dissipation is reduced by optimizing the three constituent blocks: the CMOS-type Dickson´s charge pump, the level detector for the boosted power supply (V P P), and the level shifter. The power consumption of the V P P level detector is greatly reduced by employing an RC coupled voltage divider. The short-circuit current of the level shifter is eliminated by bootstrapping the gate nodes of stacked protection PMOSFETs. The voltage upconverter is implemented into a 768-bit EEPROM using 0.18-m CMOS technology and dissipates about 20.2 W for regulation and consumption of V P P.

Keywords

CMOS integrated circuits; EPROM; bootstrap circuits; charge pump circuits; power supply circuits; short-circuit currents; voltage dividers; CMOS-type Dickson charge pump; PMOSFET; RC coupled voltage divider; boosted power supply; embedded EEPROM application; level shifter; mobile electrically erasable programmable read-only memory; power 202 muW; power dissipation; power-efficient voltage upconverter; short-circuit current; size 18 mum; voltage upconverter; Charge pump; level detector; level shifter; low-power electrically erasable programmable read-only memory (EEPROM); voltage upconverter;

fLanguage

English

Journal_Title

Circuits and Systems II: Express Briefs, IEEE Transactions on

Publisher

ieee

ISSN

1549-7747

Type

jour

DOI

10.1109/TCSII.2010.2048351

Filename

5471230