p/sup +/-AlInAs/InP junction FETs by selective molecular beam epitaxy

Author

Woodhouse, J.D. ; Donnelly, J.P. ; Manfra, M.J. ; Bailey, R.J.

Author_Institution

MIT Lincoln Lab., Lexington, MA, USA

Volume

9

Issue

11

fYear

1988

Firstpage

601

Lastpage

603

Abstract

p/sup +/-AlInAs/InP junction field-effect transistors (FETs) have been fabricated in semi-insulating InP:Fe using ion implantation and a selective molecular-beam epitaxy (MBE) technique. Current-voltage measurements on 4.0- mu m gate-length devices show a zero-gate-bias transconductance of 41 mS/mm, and RF measurements indicate a unity-power-gain frequency of 3.2 GHz. These results indicate that the selective growth method is a viable technique for fabricating high-frequency, high-power junction FETs in the InP-based materials system.<>

Keywords

III-V semiconductors; aluminium compounds; indium compounds; junction gate field effect transistors; molecular beam epitaxial growth; power transistors; solid-state microwave devices; 3.2 GHz; 4 micron; 41 mS; AlInAs-InP-InP:Fe; III-V semiconductors; InP-based materials system; JFET; MBE; RF measurements; SHF; high-frequency; high-power junction FETs; ion implantation; junction field-effect transistors; microwave device; p/sup +/-AlInAs/InP; selective growth method; selective molecular beam epitaxy; semi-insulating InP:Fe; unity-power-gain frequency; zero-gate-bias transconductance; Current measurement; FETs; Frequency measurement; Indium phosphide; Ion implantation; JFETs; Measurement units; Molecular beam epitaxial growth; Radio frequency; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.9289

Filename

9289