DocumentCode :
1502198
Title :
Microwave silicon on insulator-based design of a power management system for jet propulsion laboratory´s rechargeable micro-scale batteries
Author :
Alahmad, M. ; Hess, Herbert
Author_Institution :
Univ. of Nebraska-Lincoln, Lincoln, NE, USA
Volume :
4
Issue :
3
fYear :
2010
fDate :
5/1/2010 12:00:00 AM
Firstpage :
261
Lastpage :
268
Abstract :
In the area of power storage for aerospace applications, Jet Propulsion Laboratory, California Institute of Technology, has developed an all solid-state rechargeable micro-scale lithium ion battery cell (micro-battery) rated at 4.25 V, with nano-Ampere hour capacity. One of the advantages of this development is the ability to fabricate approximately 20 000 individual micro-battery cells adjacent to each other on the same four-inch silicon wafer. To take advantage of a pre/post-fabricated series, parallel or series/parallel connection of the cells, a power management system has been developed and sub-system circuits designed using a combination of device and circuit techniques meeting high voltage switching requirements in silicon on insulator (SOI) technology to reconfigure and control the charge/discharge operation of the cells for practical application. This study will present a detailed analysis of the power management system and its sub-circuit components. The circuit components have been simulated using 3.3 V SOI SPICE models and have been fabricated in a 0.35 m Microwave SOI process. A description of the system and the results will also be discussed and analysed.
Keywords :
SPICE; aircraft power systems; battery management systems; microwave integrated circuits; power supplies to apparatus; secondary cells; silicon-on-insulator; Jet Propulsion Laboratory; SOI SPICE models; high voltage switching; microbattery cells; microwave SOI process; microwave silicon on insulator based design; power management system; rechargeable microscale batteries; size 0.35 mum; solid state rechargeable micro scale lithium ion battery cell; voltage 3.3 V; voltage 4.25 V;
fLanguage :
English
Journal_Title :
Circuits, Devices & Systems, IET
Publisher :
iet
ISSN :
1751-858X
Type :
jour
DOI :
10.1049/iet-cds.2009.0154
Filename :
5471263
Link To Document :
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