Title :
High-performance In/sub 0.08/Ga/sub 0.92/As MESFETs on GaAs
Author :
Shih, Hung-Dah ; Kim, Bumman ; Bradshaw, Keith ; Tserng, Hua Quen
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
In/sub 0.08/Ga/sub 0.92/As MESFETs were grown in GaAs
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; molecular beam epitaxial growth; solid-state microwave devices; 0.4 micron; 36 GHz; 400 mS; 50 micron; 65 GHz; III-V semiconductors; In/sub 0.08/Ga/sub 0.92/As active layer; In/sub 0.08/Ga/sub 0.92/As-GaAs; MBE; MESFETs; SHF; current-gain cutoff frequency; gate length; gate width; microwave device; molecular beam epitaxy; n/sup +/-In/sub 0.08/Ga/sub 0.92/As cap layer; power-gain cutoff frequency; transconductance; undoped compositionally graded In/sub x/Ga/sub 1-x/As buffer layer; Buffer layers; Current density; Cutoff frequency; Doping; FETs; Gallium arsenide; MESFETs; Molecular beam epitaxial growth; Substrates; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
