Title :
An investigation of the optoelectronic response of GaAs/InGaAs MSM photodetectors
Author :
Schumacher, H. ; Leblanc, H.P. ; Soole, J. ; Bhat, R.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Abstract :
It is shown that the planar metal-semiconductor-metal photodetectors on InGaAs/InP with a strained GaAs top layer are promising candidates for optoelectronic integration of long-wavelength (1.3-1.55 mu m) fiber-optic components, combining speed of response (8.5-GHz bandwidth) with a simple technology (only four processing steps were required for the presented detector). Some low-frequency gain was observed at high bias voltages along with a low-frequency increase in noise above that expected from shot noise.<>
Keywords :
III-V semiconductors; electron device noise; gallium arsenide; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; optical communication equipment; photodetectors; 1.3 to 1.55 micron; 8.5 GHz; GaAs-InGaAs-InP; III-V semiconductors; blocking contacts; fiber-optic components; high bias voltages; long-wavelength; low-frequency gain; metal-semiconductor-metal photodetectors; noise; optoelectronic integration; optoelectronic response; planar MSM type; strained GaAs top layer; Absorption; Detectors; Fingers; Gallium arsenide; Gold; Indium gallium arsenide; Indium phosphide; Optical noise; Photodetectors; Substrates;
Journal_Title :
Electron Device Letters, IEEE
