DocumentCode
1502575
Title
High-Linearity Uni-Traveling-Carrier Photodiodes
Author
Pan, Huapu ; Beling, Andreas ; Campbell, Joe C.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
Volume
21
Issue
24
fYear
2009
Firstpage
1855
Lastpage
1857
Abstract
The third-order intermodulation distortions of an InGaAs-InP charge-compensated uni-traveling-carrier photodiode are characterized using both two-tone and three-tone measurement techniques. Up to 720-MHz modulation frequency the third-order output intercept point (OIP3) reaches 56 ??1 dBm.
Keywords
III-V semiconductors; indium compounds; optical modulation; photodiodes; InGaAs-InP; charge compensated unitraveling-carrier photodiode; high linearity unitraveling carrier photodiodes; third order intermodulation distortion; Indium compounds; nonlinearities; photodetectors; photodiodes;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2009.2034126
Filename
5290023
Link To Document