AlGaAs/InGaAs/GaAs quantum-well power MISFET at millimeter-wave frequencies

Author

Kim, Bumman ; Matyi, R.J. ; Wurtele, Mariane ; Tserng, Hua Quan

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

Volume

9

Issue

11

fYear

1988

Firstpage

610

Lastpage

612

Abstract

An AlGaAs/InGaAs/GaAs quantum-well MISFET developed for power operation at millimeter-wave frequencies is described. The InGaAs channel is heavily doped to increase the sheet carrier density, resulting in a maximum current density of 700 mA/mm with a transconductance of 480 mS/mm. The 0.25- mu m*50- mu m device delivers a power density of 0.76 W/mm with 3.6-dB gain and 19% power-added efficiency at 60 GHz. At 5.2 dB gain, the power density is 0.55 W/mm. A similar device built on an undoped InGaAs channel had much poorer power performance and no speed advantage.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; insulated gate field effect transistors; power transistors; solid-state microwave devices; 19 percent; 3.6 to 5.2 dB; 480 mS; 60 GHz; AlGaAs-InGaAs-GaAs; EHF; MM-wave type; heavily doped InGaAs channel; microwave device; millimeter-wave frequencies; power MISFET; power-added efficiency; quantum-well; transconductance; Charge carrier density; Current density; Frequency; Gain; Gallium arsenide; Indium gallium arsenide; MISFETs; Quantum well devices; Quantum wells; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.9292

Filename

9292