A fully integrated Ku-band Doherty amplifier MMIC

Author

Campbell, C.F.

Author_Institution

TriQuint Semicond. Inc., Dallas, TX, USA

Volume

9

Issue

3

fYear

1999

fDate

3/1/1999 12:00:00 AM

Firstpage

114

Lastpage

116

Abstract

The design and performance of a fully integrated Ku-band Doherty amplifier monolithic microwave integrated circuit (MMIC) is presented. The circuit is implemented in 0.25-μm pHEMT MMIC technology and demonstrates the feasibility of the Doherty approach at Ku-band frequencies. The fabricated devices achieved a two-tone power-added efficiency of 40% with a corresponding third-order C/I ratio of 24 dBc at 17 GHz. To the author´s knowledge this is the first fully integrated pHEMT Doherty amplifier MMIC as well as the first experimental results for a Doherty amplifier at Ku-band reported to date.

Keywords

HEMT integrated circuits; MMIC amplifiers; S-parameters; field effect MMIC; integrated circuit design; 0.25 micron; 17 GHz; 40 percent; Doherty amplifier MMIC; Ku-band amplifier; PHEMT MMIC; SHF; fully integrated Doherty amplifier; monolithic microwave integrated circuit; pHEMT MMIC technology; pseudomorphic HEMT; two-tone power-added efficiency; Impedance; MMICs; Microwave amplifiers; Microwave devices; Microwave integrated circuits; Monolithic integrated circuits; PHEMTs; Power amplifiers; Power generation; Radiofrequency amplifiers;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.761678

Filename

761678