Title :
Chaotic self-pulsation and cross-modulation in a wavelength-selective external-cavity laser diode
Author :
Mos, E.C. ; Hooft, G. W t ; Schleipen, J.J.H.B. ; de Waardt, H.
Author_Institution :
Eindhoven Univ. of Technol., Netherlands
fDate :
7/1/2001 12:00:00 AM
Abstract :
Chaotic self-pulsation in a single wavelength external-cavity laser diode is observed. It is shown that the self-pulsation is caused by interdependencies between the optical output power and the compound cavity losses through the refractive index of the laser diode material. Refractive index changes result in a detuning between the externally selected wavelength and the weak internal-mode structure of the anti-reflection coated laser diode. This detuning is directly related to the compound cavity losses. On the one hand, a change in optical output power results in a change of the refractive index via the carrier density. On the other hand, it results in a change of refractive index via temperature changes. Compared to the carrier induced refractive index change, the temperature induced refractive index change is opposite in sign, a factor of ∼10 2 smaller and slower. The switch-on and switch-off time of the self-pulsation is governed by the carrier life time. The repetition rate of the self-pulsation is governed by the thermal time constant and is in the megahertz region. Cross-modulation resulting from the thermal induced refractive index change is demonstrated. In a two-wavelength double external-cavity laser diode, optical power at one wavelength effects the optical power at the other wavelength. This cross-modulation is shown to be related to previous experiments on a laser neural network. A novel technique is introduced to measure the thermal impedance of a laser diode that is based on the cross-modulation.
Keywords :
carrier density; carrier lifetime; laser cavity resonators; optical chaos; optical losses; optical modulation; optical neural nets; refractive index; semiconductor lasers; anti-reflection coated laser diode; carrier density; carrier life time; chaotic self-pulsation; compound cavity losses; cross-modulation; detuning; externally selected wavelength; laser neural network; megahertz region; optical output power; optical power; refractive index; repetition rate; single wavelength external-cavity laser diode; switch-off time; switch-on time; temperature changes; thermal impedance; thermal induced refractive index change; thermal time constant; two-wavelength double external-cavity laser diode; wavelength-selective external-cavity laser diode; weak internal-mode structure; Chaos; Diode lasers; Optical computing; Optical losses; Optical materials; Optical refraction; Optical variables control; Power generation; Refractive index; Temperature;
Journal_Title :
Quantum Electronics, IEEE Journal of