DocumentCode
150308
Title
Insulated signal transmission system using planar resonant coupling technology for high voltage IGBT gate driver
Author
Shinoda, Hiroyuki ; Terada, Tsubasa
Author_Institution
Inf. Electron. Res. Dept., Hitachi, Ltd., Kokubunji, Japan
fYear
2014
fDate
14-18 Sept. 2014
Firstpage
265
Lastpage
270
Abstract
An insulated signal transmission system using planar resonant coupling technology has been developed for providing driving signal transmission to control power electronic equipment. The resonant coupling can reduce the unwanted leakage that prevents conventional wireless systems from being applied inside the equipment. Using planar resonant couplers, the system restricted propagation loss to -0.9 dB and return loss to -10.0 dB in a wide frequency range of 2.2-2.78 GHz. Additionally, the couplers showed highly reliable parasitic capacitance characteristics and partial discharge characteristics. The developed system demonstrated switching operation of 3.3 kV-1200 A insulated-gate bipolar transistors (IGBTs) without disturbances between the highpower switching IGBTs and the RF transceivers.
Keywords
coupled circuits; driver circuits; insulated gate bipolar transistors; partial discharges; resonators; RF transceiver; current 1200 A; frequency 2.2 GHz to 2.78 GHz; high voltage IGBT gate driver; high-power switching IGBT; insulated signal transmission system; insulated-gate bipolar transistor; loss -0.9 dB; loss -10.0 dB; parasitic capacitance characteristics; partial discharge characteristics; planar resonant coupling technology; power electronic equipment control; system restricted propagation loss; voltage 3.3 kV; wireless system; Couplers; Couplings; Insulated gate bipolar transistors; Logic gates; Propagation losses; Radio frequency; Transceivers;
fLanguage
English
Publisher
ieee
Conference_Titel
Energy Conversion Congress and Exposition (ECCE), 2014 IEEE
Conference_Location
Pittsburgh, PA
Type
conf
DOI
10.1109/ECCE.2014.6953403
Filename
6953403
Link To Document