Temperature Dependence of the Transconductance in Ballistic III–V QWFETs

The temperature dependence of the transconductance in III-V quantum well field-effect transistors is studied using 2-D ballistic device simulations. It is found that the experimental characteristics of the temperature-dependent transconductance are captured by considering ballistic transport only, with no electron-phonon scattering. While the temperature behavior of the transconductance mainly depends on the intrinsic properties of the III-V devices at low V_DS it is strongly affected by the series resistances at high V_DS. Hence, it will be shown that the transconductance at high V_DS becomes less temperature dependent as the series resistance decreases.