Temperature Dependence of the Transconductance in Ballistic III–V QWFETs

Author

Liu, Yang ; Luisier, Mathieu ; Lundstrom, Mark S.

Author_Institution

IBM Res., Hopewell Junction, NY, USA

Volume

58

Issue

6

fYear

2011

fDate

6/1/2011 12:00:00 AM

Firstpage

1804

Lastpage

1808

Abstract

The temperature dependence of the transconductance in III-V quantum well field-effect transistors is studied using 2-D ballistic device simulations. It is found that the experimental characteristics of the temperature-dependent transconductance are captured by considering ballistic transport only, with no electron-phonon scattering. While the temperature behavior of the transconductance mainly depends on the intrinsic properties of the III-V devices at low V_DS it is strongly affected by the series resistances at high V_DS. Hence, it will be shown that the transconductance at high V_DS becomes less temperature dependent as the series resistance decreases.

Keywords

III-V semiconductors; ballistic transport; field effect transistors; quantum well devices; 2D ballistic device simulation; ballistic III-V quantum well field-effect transistor; ballistic transport; intrinsic property; temperature-dependent transconductance; HEMTs; MODFETs; Resistance; Scattering; Temperature dependence; Temperature measurement; Transconductance; Ballistic transport; high-electron mobility transistors (HEMTs); injection velocity; metal–oxide–semiconductor field-effect transistors (MOSFETs); quantum confinement; transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2011.2129520

Filename

5755189