Title :
Investigating the reliability of SiC MOSFET body diodes using Fourier series modelling
Author :
Bonyadi, Roozbeh ; Alatise, Olayiwola ; Jahdi, Saeed ; Hu, Jiankun ; Evans, L. ; Mawby, P.A.
Author_Institution :
Sch. of Eng., Univ. of Warwick, Coventry, UK
Abstract :
Using the Fourier series solution to the ambipolar diffusion equation, the robustness of the body diodes of SiC MOSFETs during reverse recovery has been studied. Parasitic bipolar latch-up during the reverse recovery of the body diode is a possible if there is sufficient base current and voltage drop across the body resistance to forward bias the parasitic BJT. SiC MOSFETs have very low carrier lifetime and thin epitaxial drift layers, which means that the dV/dt during the recovery of the body diode can be quite high. This dV/dt coupled with the parasitic drain-to-body capacitance can cause a body current. The paper introduces a new way of assessing the reliability of SiC MOSFETs during the reverse recovery of the body diode. The impact of switching rates, parasitic inductances and carrier lifetime on the activation of the parasitic BJT has been studied.
Keywords :
Fourier series; MOSFET; capacitance; carrier lifetime; electric potential; electric resistance; inductance; semiconductor device reliability; semiconductor diodes; silicon compounds; wide band gap semiconductors; Fourier series modelling; MOSFET body diode reliability; SiC; ambipolar diffusion equation; body resistance; carrier lifetime; parasitic BJT; parasitic bipolar latch-up; parasitic drain-to-body capacitance; parasitic inductance; reverse recovery; thin epitaxial drift layers; Fourier series; Immune system; Logic gates; MOSFET; Mathematical model; Silicon carbide; Switches; Ambipolar Diffusion Equation; Body Diode; Fourier series; Inverter; MOSFET; PiN Diodes;
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2014 IEEE
Conference_Location :
Pittsburgh, PA
DOI :
10.1109/ECCE.2014.6953427