Title :
50 GHz InGaAs edge-coupled PIN photodetector
Author :
Wake, D. ; Spooner, T.P. ; Perrin, S.D. ; Henning, I.D.
Author_Institution :
British Telecom. Res. Lab., Ipswich, UK
fDate :
6/6/1991 12:00:00 AM
Abstract :
An edge-coupled PIN photodetector with an InGaAs absorber layer has been designed and fabricated. Values of bandwidth at 1530 nm, with and without bias, have been measured as 50 GHz and 20 GHz, respectively. The external quantum efficiency is as high as 40% using a standard 12 mu m radius lens-ended single-mode fibre.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; p-i-n diodes; photodetectors; photodiodes; 1530 nm; 20 GHz; 40 percent; 50 GHz; InGaAs absorber layer; PIN photodetector; edge-coupled; external quantum efficiency; lens-ended single-mode fibre; optical receivers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910666
