DocumentCode
1503379
Title
50 GHz InGaAs edge-coupled PIN photodetector
Author
Wake, D. ; Spooner, T.P. ; Perrin, S.D. ; Henning, I.D.
Author_Institution
British Telecom. Res. Lab., Ipswich, UK
Volume
27
Issue
12
fYear
1991
fDate
6/6/1991 12:00:00 AM
Firstpage
1073
Lastpage
1075
Abstract
An edge-coupled PIN photodetector with an InGaAs absorber layer has been designed and fabricated. Values of bandwidth at 1530 nm, with and without bias, have been measured as 50 GHz and 20 GHz, respectively. The external quantum efficiency is as high as 40% using a standard 12 mu m radius lens-ended single-mode fibre.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; p-i-n diodes; photodetectors; photodiodes; 1530 nm; 20 GHz; 40 percent; 50 GHz; InGaAs absorber layer; PIN photodetector; edge-coupled; external quantum efficiency; lens-ended single-mode fibre; optical receivers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910666
Filename
76183
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