Improved Resistive Switching Reliability in Graded NiO Multilayer for Resistive Nonvolatile Memory Devices

Author

Lee, Myoung-Jae ; Lee, Chang Bum ; Lee, Dongsoo ; Lee, Seung Ryul ; Hur, Jihyun ; Ahn, Seung-Eon ; Chang, Man ; Kim, Young-Bae ; Chung, U-in ; Kim, Chang-Jung ; Kim, Dong-Sik ; Lee, Hosun

Author_Institution

Samsung Adv. Inst. of Technol., Suwon, South Korea

Volume

31

Issue

7

fYear

2010

fDate

7/1/2010 12:00:00 AM

Firstpage

725

Lastpage

727

Abstract

An alternative approach of controlling bistable resistance switching in NiO was investigated. By fabricating a multilayer structure of three NiOx layers with varying oxygen content, bistable resistance switching could be localized. By varying the enveloping oxygen partial pressure during NiOx layer deposition from 10% to 30%, improved resistance and switching voltage distribution from cycle to cycle was achieved. In addition, more localized switching could emulate sub-100-nm-sized cells showing decreased reset current values on the order of 100 A. X-ray photon spectroscopy analysis shows a clear grading near the interfaces of successive NiO layers.

Keywords

X-ray spectra; integrated circuit reliability; multilayers; nickel compounds; random-access storage; NiO; NiOx layer deposition; X-ray photon spectroscopy analysis; bistable resistance switching; graded NiO multilayer; multilayer structure; resistive nonvolatile memory devices; resistive switching reliability; switching voltage distribution; Nonvolatile memory; resistance switching;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2048886

Filename

5473041