Comparison of theoretical and experimental 60 GHz silicon IMPATT diode performance

Author

Banerjee, J.P. ; Luy, J.F. ; SCHÄFFLER, F.

Author_Institution

Dept. of Electron. Sci., Calcutta Univ., India

Volume

27

Issue

12

fYear

1991

fDate

6/6/1991 12:00:00 AM

Firstpage

1049

Lastpage

1051

Abstract

Theoretical and experimental investigations have been carried out for V-band (50-75 GHz) silicon double drift flat profile (DD) and double low high low (DLHL) IMPATT diodes. The theoretical designs have been used for the experimental realisation of the diodes for CW operation. The epitaxial layers were grown by silicon molecular beam epitaxy which enabled the realisation of the complex DLHL profile at millimetre-wave frequencies in the silicon material system for the first time. The maximum obtained conversion efficiency is 14.3%. A comparison of theoretical and experimental results for both types of diodes shows general agreement and the superiority of the DLHL structure.

Keywords

IMPATT diodes; elemental semiconductors; molecular beam epitaxial growth; silicon; 14.3 percent; 50 to 75 GHz; 60 GHz; CW operation; DLHL structure; EHF; IMPATT diode; MBE; MM-wave device; Si; V-band; conversion efficiency; double drift flat profile; double low high low; epitaxial layers; microwave device; millimetre-wave frequencies; molecular beam epitaxy;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19910652

Filename

76186