Title :
Digital integrated circuit using integrated InAlAs/InGaAs/InP HEMTs and InAs/AlSb/GaSb RITDs
Author :
Fay, P. ; Lu, J. ; Xu, Y. ; Bernstein, G.H. ; Gonzalez, A. ; Mazumder, P. ; Chow, D.H. ; Schulman, J.N.
Author_Institution :
Dept. of Electr. Eng., Notre Dame Univ., IN, USA
fDate :
6/7/2001 12:00:00 AM
Abstract :
The demonstration of the first integrated circuit using monolithically integrated InAs/AlSb/GaSb resonant interband tunnelling diodes (RITDs) and InAlAs/InGaAs/InP high electron mobility transistors (HEMTs) is reported. A D-flip-flop (D-FF) was implemented using the monostable/bistable logic element (MOBILE) circuit architecture, with a measured effective voltage gain in excess of 380. Power dissipation of less than 2.8 mW/gate was measured
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; flip-flops; gallium arsenide; gallium compounds; indium compounds; resonant tunnelling diodes; sequential circuits; D-flip-flop; HEMTs; InAlAs-InGaAs-InP; InAs-AlSb-GaSb; RITDs; circuit architecture; effective voltage gain; high electron mobility transistors; monostable/bistable logic element; power dissipation; resonant interband tunnelling diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010547
