Title :
Comparison of Si and SiC diodes during operation in three-phase inverter driving ac induction motor
Author :
Wright, W. ; Carter, J. ; Alexandrov, P. ; Pan, M. ; Weiner, M. ; Zhao, J.H.
Author_Institution :
United Silicon Carbide Inc., New Brunswick, NJ, USA
fDate :
6/7/2001 12:00:00 AM
Abstract :
4H-SiC JBS diodes have been used in an inverter circuit, driving an actual three-phase ac induction motor at power levels up to 2.2 HP. Switching waveforms were measured and compared between inverters based on Si PiN diodes and 4H-SiC MPS diodes. The results clearly show a significant reduction in power dissipation, in both the diode and the IGBT switch, when SiC diodes replace the Si diodes. The reduction is most evident at the higher temperatures
Keywords :
Schottky diodes; elemental semiconductors; induction motors; invertors; power semiconductor diodes; silicon; silicon compounds; wide band gap semiconductors; 2.2 hp; 4H-SiC MPS diode; AC induction motor; IGBT switch; Si; Si PIN diode; Si diode; SiC; SiC diode; junction barrier Schottky diode; power dissipation; switching waveform; three-phase inverter circuit;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010535
