DocumentCode
1503676
Title
Comparison of Si and SiC diodes during operation in three-phase inverter driving ac induction motor
Author
Wright, W. ; Carter, J. ; Alexandrov, P. ; Pan, M. ; Weiner, M. ; Zhao, J.H.
Author_Institution
United Silicon Carbide Inc., New Brunswick, NJ, USA
Volume
37
Issue
12
fYear
2001
fDate
6/7/2001 12:00:00 AM
Firstpage
787
Lastpage
788
Abstract
4H-SiC JBS diodes have been used in an inverter circuit, driving an actual three-phase ac induction motor at power levels up to 2.2 HP. Switching waveforms were measured and compared between inverters based on Si PiN diodes and 4H-SiC MPS diodes. The results clearly show a significant reduction in power dissipation, in both the diode and the IGBT switch, when SiC diodes replace the Si diodes. The reduction is most evident at the higher temperatures
Keywords
Schottky diodes; elemental semiconductors; induction motors; invertors; power semiconductor diodes; silicon; silicon compounds; wide band gap semiconductors; 2.2 hp; 4H-SiC MPS diode; AC induction motor; IGBT switch; Si; Si PIN diode; Si diode; SiC; SiC diode; junction barrier Schottky diode; power dissipation; switching waveform; three-phase inverter circuit;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20010535
Filename
929698
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