Design and evaluation of GaN-based dual-phase interleaved MHz critical mode PFC converter

Author

Zhengyang Liu ; Xiucheng Huang ; Mingkai Mu ; Yuchen Yang ; Lee, Fred C. ; Qiang Li

Author_Institution

Bradley Dept. of Electr. & Comput. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA

fYear

2014

fDate

14-18 Sept. 2014

Firstpage

611

Lastpage

616

Abstract

This paper presents the design consideration and performance evaluation of gallium nitride (GaN) high electron mobility transistor (HEMT) based dual-phase interleaved MHz critical conduction mode (CRM) power factor correction (PFC) converter. A 1.2kW 1-3MHz interleaved boost PFC converter prototype is built with 97.9% peak efficiency and 120W/in³ power density. The significant impact of MHz frequency is demonstrated as dramatically size reduction of boost inductor and electro-magnetic interference (EMI) filter. Several inductor designs are discussed. The corner frequency of EMI filter is pushed to several hundreds of kHz. Finally, the limitation of conventional boost PFC converter is discussed as high conduction loss on diode rectifier bridge and high switching loss caused by valley switching, which is negligible in other low frequency PFC converter but significant in MHz PFC converter. The totem-pole bridgeless PFC converter is introduced to further improve the efficiency with no rectifier bridge and zero-voltage switching (ZVS) extension strategy.

Keywords

diodes; electromagnetic interference; high electron mobility transistors; inductors; power convertors; power factor correction; rectifiers; CRM; EMI filter; GaN; ZVS; boost inductor; conduction loss; diode rectifier bridge; dual-phase interleaved MHz critical conduction mode PFC converter; efficiency 97.9 percent; electromagnetic interference filter; frequency 1 MHz to 3 MHz; high electron mobility transistor; interleaved boost PFC converter; performance evaluation; power 1.2 kW; power factor correction; rectifier bridge; totem-pole bridgeless PFC converter; valley switching loss; zero-voltage switching extension strategy; Electromagnetic interference; Ferrites; Gallium nitride; HEMTs; Inductors; Switches; Windings;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Congress and Exposition (ECCE), 2014 IEEE

Conference_Location

Pittsburgh, PA

Type

conf

DOI

10.1109/ECCE.2014.6953451

Filename

6953451