InAs-Based Mid-Infrared Interband Cascade Lasers Near 5.3 $\\mu{\\rm m}$

Author

Tian, Zhaobing ; Jiang, Yuchao ; Li, Lu ; Hinkey, Robert T. ; Yin, Zuowei ; Yang, Rui Q. ; Mishima, Tetsuya D. ; Santos, Michael B. ; Johnson, Matthew B.

Author_Institution

Sch. of Electr. & Comput. Eng., Univ. of Oklahoma, Norman, OK, USA

Volume

48

Issue

7

fYear

2012

fDate

7/1/2012 12:00:00 AM

Firstpage

915

Lastpage

921

Abstract

InAs-based interband cascade (IC) lasers with dielectric-metal hybrid top cladding layers were demonstrated at emission wavelengths near 5.3 μm for temperatures up to 248 K in continuous wave mode and 300 K in pulsed mode. Preliminary experimental results showed that these hybrid waveguide IC lasers had slightly better device performances in terms of operating temperature, compared to IC lasers with InAs plasmon cladding layers on both sides. The threshold current densities of these IC lasers were as low as 12 A/cm² with voltage efficiency above 96% at 80 K. The output power of these IC lasers reached 120 mW/facet and a power efficiency of 21% was obtained at 80 K.

Keywords

III-V semiconductors; claddings; current density; indium compounds; laser beams; laser modes; quantum cascade lasers; waveguide lasers; InAs; continuous wave mode; device performances; dielectric-metal hybrid top cladding layers; emission wavelengths; hybrid waveguide IC lasers; laser output power; midinfrared interband cascade lasers; operating temperature; power efficiency; pulsed mode; temperature 300 K; temperature 80 K; threshold current densities; voltage efficiency; Gold; Integrated circuits; Integrated optics; Laser modes; Optical losses; Optical waveguides; Waveguide lasers; Diode lasers; mid-infrared; optical waveguide;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2012.2195477

Filename

6190707