DocumentCode :
1503816
Title :
InAs-Based Mid-Infrared Interband Cascade Lasers Near 5.3 
Author :
Tian, Zhaobing ; Jiang, Yuchao ; Li, Lu ; Hinkey, Robert T. ; Yin, Zuowei ; Yang, Rui Q. ; Mishima, Tetsuya D. ; Santos, Michael B. ; Johnson, Matthew B.
Author_Institution :
Sch. of Electr. & Comput. Eng., Univ. of Oklahoma, Norman, OK, USA
Volume :
48
Issue :
7
fYear :
2012
fDate :
7/1/2012 12:00:00 AM
Firstpage :
915
Lastpage :
921
Abstract :
InAs-based interband cascade (IC) lasers with dielectric-metal hybrid top cladding layers were demonstrated at emission wavelengths near 5.3 μm for temperatures up to 248 K in continuous wave mode and 300 K in pulsed mode. Preliminary experimental results showed that these hybrid waveguide IC lasers had slightly better device performances in terms of operating temperature, compared to IC lasers with InAs plasmon cladding layers on both sides. The threshold current densities of these IC lasers were as low as 12 A/cm2 with voltage efficiency above 96% at 80 K. The output power of these IC lasers reached 120 mW/facet and a power efficiency of 21% was obtained at 80 K.
Keywords :
III-V semiconductors; claddings; current density; indium compounds; laser beams; laser modes; quantum cascade lasers; waveguide lasers; InAs; continuous wave mode; device performances; dielectric-metal hybrid top cladding layers; emission wavelengths; hybrid waveguide IC lasers; laser output power; midinfrared interband cascade lasers; operating temperature; power efficiency; pulsed mode; temperature 300 K; temperature 80 K; threshold current densities; voltage efficiency; Gold; Integrated circuits; Integrated optics; Laser modes; Optical losses; Optical waveguides; Waveguide lasers; Diode lasers; mid-infrared; optical waveguide;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2012.2195477
Filename :
6190707
Link To Document :
