Title :
Self-Aligned N-Polar GaN/InAlN MIS-HEMTs With Record Extrinsic Transconductance of 1105 mS/mm
Author :
Nidhi ; Dasgupta, Sansaptak ; Lu, Jing ; Speck, James S. ; Mishra, Umesh K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
fDate :
6/1/2012 12:00:00 AM
Abstract :
In this letter, we demonstrate state-of-the-art performance from N-polar GaN/InAlN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs). Self-aligned gate-first process was used for the fabrication of transistors. Graded InGaN and InN contact layers were used to achieve a low ohmic contact resistance of 25 Ω · μm. Excellent dc performance with the highest extrinsic gm of 1105 mS/mm, lowest Ron of 0.29 Ω · mm, and maximum current of 2.77 A/mm was achieved for Lg = 60 nm. The dc performance was found to scale well with the gate length. The highest fT of 155 GHz was obtained for Lg = 30 nm.
Keywords :
III-V semiconductors; MISFET; aluminium compounds; contact resistance; gallium compounds; high electron mobility transistors; indium compounds; millimetre wave transistors; ohmic contacts; wide band gap semiconductors; GaN-InAlN; contact layer; frequency 155 GHz; low ohmic contact resistance; metal-insulator-semiconductor high-electron mobility transistor fabrication; record extrinsic transconductance; self-aligned gate-first processing; self-aligned n-polar MIS-HEMT fabrication; size 30 nm; size 60 nm; Gallium nitride; HEMTs; Logic gates; Ohmic contacts; Performance evaluation; Resistance; Contact regrowth; InAlN barrier; InGaN contact; InN contact; N-polar GaN; metal–insulator–semiconductor high-electron mobility transistor (MIS-HEMT); self-aligned HEMT;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2190965
