Low threshold current density 1.5 mu m GaInAs/AlGaInAs graded-index separate-confinement-heterostructure quantum well laser diodes grown by metal organic chemical vapour deposition

Author

Kasukawa, A. ; Bhat, Ritesh ; Zah, C.E. ; Schwarz, S.A. ; Hwang, D.M. ; Koza, M.A. ; Lee, T.P.

Author_Institution

Bell Commun. Res., Red Bank, NJ, USA

Volume

27

Issue

12

fYear

1991

fDate

6/6/1991 12:00:00 AM

Firstpage

1063

Lastpage

1065

Abstract

A low threshold current density of 640 A/cm² was obtained in a 1.5 Gmm GaInAs/AlGaInAs multiple quantum well laser diode, grown by metal organic chemical vapour deposition, with continuously graded-index separate-confinement heterostructure. An internal waveguide loss of 14 cm^-1 and internal quantum efficiency of 59% were obtained, which are comparable to those of GaInAs/GaInAsP quantum well laser diodes.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; indium compounds; laser transitions; optical waveguides; semiconductor junction lasers; vapour phase epitaxial growth; 1.5 micron; 59 percent; GRINSCH; GaInAs-AlGaInAs; MOCVD; graded-index; internal quantum efficiency; internal waveguide loss; laser diodes; low threshold current density; metal organic chemical vapour deposition; multiple quantum well; semiconductor lasers; separate-confinement-heterostructure;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19910660

Filename

76195