InGaN-Based Light-Emitting Diodes With a Sawtooth-Shaped Sidewall on Sapphire Substrate

Author

Lin, Chun-Min ; Lin, Chia-Feng ; Shieh, Bing-Cheng ; Yu, Tzu-Yun ; Chen, Sih-Han ; Tsai, Peng-Han ; Chen, Kuei-Ting ; Dai, Jing-Jie ; Tsai, Tzong-Liang

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Chung Hsing Univ., Taichung, Taiwan

Volume

24

Issue

13

fYear

2012

fDate

7/1/2012 12:00:00 AM

Firstpage

1133

Lastpage

1135

Abstract

An InGaN light-emitting diode (LED) with a cone-shaped GaN structure and a sawtooth-shaped sapphire sidewall structure was fabricated through a laser-drilling process. The fabricated procedures consisted of a laser scribing/drilling process, a wet etching process, and a chip cleaving process. In the treated LED structure with the laser-drilling sawtooth-shaped sidewall, the light output power had a 16% enhancement compared to a conventional LED structure with a laser-scribing sidewall. A periodic high light emission intensity, with a 2.6- μm width spaced at regular intervals of 3.8 μm, was observed on the treated LED sidewall structure corresponding to the laser-drilling patterns. The LED structure consists of a laser-drilling sidewall and a cone-shaped GaN structure that increases the light extraction efficiency for high efficiency InGaN LED applications.

Keywords

III-V semiconductors; indium compounds; laser materials processing; light emitting diodes; sapphire; wide band gap semiconductors; Al₂O₃; InGaN; chip cleaving process; cone-shaped GaN structure; laser-drilling process; laser-scribing sidewall; light emitting diodes; sapphire substrate; sawtooth-shaped sidewall; wet etching process; Gallium nitride; Light emitting diodes; Measurement by laser beam; Semiconductor device measurement; Substrates; Surface emitting lasers; InGaN; laser scribing/drilling process; sawtooth-shaped sidewall structure;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2012.2196511

Filename

6190715