Title :
Polarisation control for surface emitting lasers
Author :
Shimuzi, M. ; Mukaihara, Toshikazu ; Koyama, Fumio ; Iga, Kenichi
Author_Institution :
Tokyo Inst. of Technol. Precision & Intelligence Lab., Yokohama, Japan
fDate :
6/6/1991 12:00:00 AM
Abstract :
A polarisation control method for surface emitting lasers is proposed. By preparing high refractive index films on one side of dielectric multilayer reflector walls, a differential loss for orthogonal polarisations can be provided. A GaAlAs-GaAs device was fabricated based on this design and the polarisation control has been demonstrated up to 1.4 times the threshold.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; light polarisation; semiconductor junction lasers; GaAlAs-GaAs device; dielectric multilayer reflector walls; differential loss; high refractive index films; orthogonal polarisations; polarisation control method; semiconductor lasers; surface emitting lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910662
