An accurately scaled small-signal model for interdigitated power P-HEMT up to 50 GHz

Author

Chen, Shen-Whan ; Aina, Olaleye ; Li, Weiqi ; Phelps, Lee ; Lee, Tim

Author_Institution

IC Bus. Unit, Millimeter IC Product, Clarksburg, MD, USA

Volume

45

Issue

5

fYear

1997

fDate

5/1/1997 12:00:00 AM

Firstpage

700

Lastpage

703

Abstract

In this paper, the authors report an approach for constructing scalable small-signal models for interdigitated power pseudomorphic high-electron-mobility transistors (P-HEMTs). By using cold-FET and Yang-Long measurement, as well as direct extraction procedures, scaling rules for extrinsic components were established that allow accurate models over a broad frequency range. These models have been used to design ultrawide-band monolithic microwave integrated circuits (MMICs) up to 50 GHz

Keywords

microwave field effect transistors; microwave power transistors; power HEMT; power field effect transistors; semiconductor device models; 50 GHz; Yang-Long measurement; cold-FET measurement; direct extraction; interdigitated power P-HEMT; pseudomorphic high-electron-mobility transistor; scaling rule; small-signal model; ultrawide-band MMIC design; Doping; Equivalent circuits; Feeds; HEMTs; Indium gallium arsenide; Integrated circuit modeling; Low-noise amplifiers; MMICs; Molecular beam epitaxial growth; PHEMTs;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.575590

Filename

575590