DocumentCode
1503970
Title
Investigation of Wideband Load Transformation Networks for Class-E Switching-Mode Power Amplifiers
Author
Wei, Muh-Dey ; Kalim, Danish ; Erguvan, Denis ; Chang, Sheng-Fuh ; Negra, Renato
Author_Institution
Ultra Highspeed Mobile Inf. & Commun. (UMIC) Res. Centre, RWTH Aachen Univ., Aachen, Germany
Volume
60
Issue
6
fYear
2012
fDate
6/1/2012 12:00:00 AM
Firstpage
1916
Lastpage
1927
Abstract
In this paper, single-ended and differential class-E load transformation networks (LTNs) for wideband operation are investigated. For this purpose, a differential third parallel-tuned tank LTN and a parallel-circuit load LTN without suppressing tanks are proposed to fulfill the class-E wideband condition. The differential parallel-circuit load (DPCL), which considers the finite RF chokes, has higher output resistance, and because of the differential structure, which ensures an open circuit at even harmonic frequencies, it is able to cover a wide frequency range. Consequently, the DPCL is well suited for highly integrated monolithic designs, as well as wideband application. Based on this analysis, a wideband class-E switching-mode power amplifier in CMOS 90 nm using the DPCL is designed. By deliberately combining the LTN with an on-chip balun, a compact size of 1.2 mm2 is achieved. The circuit performance dependency on bond-wire length variation is analyzed and discussed. Measured results show a peak output power of 28.7 dBm, power-added efficiency (PAE) of 48.0%, and drain efficiency of 55.0% at 2.3 GHz. From 1.7 to 2.7 GHz, PAE is higher than 42% and output power is above 25 dBm.
Keywords
CMOS integrated circuits; UHF amplifiers; UHF integrated circuits; power amplifiers; wideband amplifiers; CMOS technology; Class-E switching mode power amplifiers; RF chokes; UHF amplifiers; bond wire length variation; differential class-E load transformation networks; differential parallel circuit load LTN; differential structure; differential third parallel tuned tank LTN; drain efficiency; frequency 1.7 GHz to 2.7 GHz; on-chip balun; open circuit; power added efficiency; size 90 nm; wideband load transformation networks; Harmonic analysis; Impedance; Inductance; Power generation; Resistance; Wideband; Class E; load transmission network (LTN); power amplifier (PA); switching mode; wideband;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.2012.2191304
Filename
6190731
Link To Document