• DocumentCode
    1503970
  • Title

    Investigation of Wideband Load Transformation Networks for Class-E Switching-Mode Power Amplifiers

  • Author

    Wei, Muh-Dey ; Kalim, Danish ; Erguvan, Denis ; Chang, Sheng-Fuh ; Negra, Renato

  • Author_Institution
    Ultra Highspeed Mobile Inf. & Commun. (UMIC) Res. Centre, RWTH Aachen Univ., Aachen, Germany
  • Volume
    60
  • Issue
    6
  • fYear
    2012
  • fDate
    6/1/2012 12:00:00 AM
  • Firstpage
    1916
  • Lastpage
    1927
  • Abstract
    In this paper, single-ended and differential class-E load transformation networks (LTNs) for wideband operation are investigated. For this purpose, a differential third parallel-tuned tank LTN and a parallel-circuit load LTN without suppressing tanks are proposed to fulfill the class-E wideband condition. The differential parallel-circuit load (DPCL), which considers the finite RF chokes, has higher output resistance, and because of the differential structure, which ensures an open circuit at even harmonic frequencies, it is able to cover a wide frequency range. Consequently, the DPCL is well suited for highly integrated monolithic designs, as well as wideband application. Based on this analysis, a wideband class-E switching-mode power amplifier in CMOS 90 nm using the DPCL is designed. By deliberately combining the LTN with an on-chip balun, a compact size of 1.2 mm2 is achieved. The circuit performance dependency on bond-wire length variation is analyzed and discussed. Measured results show a peak output power of 28.7 dBm, power-added efficiency (PAE) of 48.0%, and drain efficiency of 55.0% at 2.3 GHz. From 1.7 to 2.7 GHz, PAE is higher than 42% and output power is above 25 dBm.
  • Keywords
    CMOS integrated circuits; UHF amplifiers; UHF integrated circuits; power amplifiers; wideband amplifiers; CMOS technology; Class-E switching mode power amplifiers; RF chokes; UHF amplifiers; bond wire length variation; differential class-E load transformation networks; differential parallel circuit load LTN; differential structure; differential third parallel tuned tank LTN; drain efficiency; frequency 1.7 GHz to 2.7 GHz; on-chip balun; open circuit; power added efficiency; size 90 nm; wideband load transformation networks; Harmonic analysis; Impedance; Inductance; Power generation; Resistance; Wideband; Class E; load transmission network (LTN); power amplifier (PA); switching mode; wideband;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.2012.2191304
  • Filename
    6190731