DocumentCode
1503986
Title
Picosecond lifetime measurement in semiconductor by optoelectronic autocorrelation
Author
Grigoras, Kestutis ; Krotkus, A. ; Deringas, A.
Author_Institution
Semicond. Phys. Inst., Acad. of Sci., Vilnius, Lithuania SSR, USSR
Volume
27
Issue
12
fYear
1991
fDate
6/6/1991 12:00:00 AM
Firstpage
1024
Lastpage
1025
Abstract
A novel optoelectronic autocorrelation technique for measuring picosecond lifetimes in semiconductors is described. The technique is based on the nonlinearity of the photovoltage dependence on the optical excitation level. Numerical simulation as well as experimental results for low-temperature epitaxial InGaAs samples are presented.
Keywords
III-V semiconductors; carrier lifetime; gallium arsenide; indium compounds; photoconductivity; semiconductor epitaxial layers; III-V semiconductors; InGaAs; low-temperature epitaxial layers; nonlinearity; optical excitation level; optoelectronic autocorrelation; photovoltage dependence; picosecond lifetimes; semiconductors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910637
Filename
76212
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