DocumentCode
1504015
Title
GaAs/AlGaAs HEMT structures with multiquantum well channels
Author
Klein, W. ; Kempter, R. ; Bohm, G. ; Trankle, Gunther ; Weimann, G.
Volume
27
Issue
12
fYear
1991
fDate
6/6/1991 12:00:00 AM
Firstpage
1035
Lastpage
1037
Abstract
The DC performance of 1 mu m gate length HEMTs with three parallel conducting GaAs quantum wells is presented. By variation of the gate voltage the three channels can be switched on successively, leading to three separate peaks in the device transconductance. By optimising the depth of the gate recess the authors fabricated transistors which exhibit good output characteristics and extremely high maximum drain currents of up to 1100 mA/mm.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor quantum wells; 1 micron; DC performance; GaAs-AlGaAs; HEMTs; III-V semiconductors; device transconductance; gate length; gate recess; gate voltage; maximum drain currents; multiquantum well channels; output characteristics;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910644
Filename
76217
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