• DocumentCode
    1504079
  • Title

    Enhanced oxygen plasma stripping of P+-implanted negative resist by hydrogen plasma pretreatment: temperature effects

  • Author

    Loong, W.-A.

  • Author_Institution
    Inst. of Appl. Chem., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    27
  • Issue
    12
  • fYear
    1991
  • fDate
    6/6/1991 12:00:00 AM
  • Firstpage
    1079
  • Lastpage
    1081
  • Abstract
    Hydrogen plasma pretreatment (90-115 degrees C, 10-30 min) of P+-implanted (100 keV, 1*1015 ion/cm2) HR-200 negative resist greatly reduces its resistance to oxygen plasma stripping at about 40 degrees C. At lower temperature for hydrogen plasma pretreatment (down to 40 degrees C) and higher temperature for oxygen plasma stripping (up to 115 degrees C), the reduction to resistance of oxygen plasma stripping by hydrogen plasma pretreatment is much smaller.
  • Keywords
    hydrogen; ion implantation; oxygen; phosphorus; plasma applications; polymer films; resists; semiconductor technology; sputter etching; temperature; 10 to 30 min; 40 to 115 degC; H plasmas pretreatment; HR-200; O plasma stripping; P +-implanted negative resist; plasma etching; temperature effects;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910670
  • Filename
    76226
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1504079