DocumentCode :
1504086
Title :
Modified multiquantum barrier for 600 nm range AlGaInP lasers
Author :
Takagi, Toshiyuki ; Koyama, Fumio ; Iga, Kenichi
Author_Institution :
Tokyo Inst. of Technol., Yokohama, Japan
Volume :
27
Issue :
12
fYear :
1991
fDate :
6/6/1991 12:00:00 AM
Firstpage :
1081
Lastpage :
1082
Abstract :
A new multiquantum barrier (MQB) to obtain a large potential cladding for visible AlGaInP lasers is proposed. The effective potential barrier enhanced by the MQB concept can be increased by constructing the MQB well layer with a smaller energy gap material rather than that of the active layer. Even for 600 nm range laser, the actual potential barrier height which electrons in the active layer feel under biased condition can be bigger than 200 meV.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser transitions; semiconductor junction lasers; 600 nm; AlGaInP lasers; biased condition; large potential cladding; modified MQB; multiquantum barrier; potential barrier height; semiconductor lasers; visible lasers;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19910671
Filename :
76227
Link To Document :
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