DocumentCode
1504086
Title
Modified multiquantum barrier for 600 nm range AlGaInP lasers
Author
Takagi, Toshiyuki ; Koyama, Fumio ; Iga, Kenichi
Author_Institution
Tokyo Inst. of Technol., Yokohama, Japan
Volume
27
Issue
12
fYear
1991
fDate
6/6/1991 12:00:00 AM
Firstpage
1081
Lastpage
1082
Abstract
A new multiquantum barrier (MQB) to obtain a large potential cladding for visible AlGaInP lasers is proposed. The effective potential barrier enhanced by the MQB concept can be increased by constructing the MQB well layer with a smaller energy gap material rather than that of the active layer. Even for 600 nm range laser, the actual potential barrier height which electrons in the active layer feel under biased condition can be bigger than 200 meV.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser transitions; semiconductor junction lasers; 600 nm; AlGaInP lasers; biased condition; large potential cladding; modified MQB; multiquantum barrier; potential barrier height; semiconductor lasers; visible lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910671
Filename
76227
Link To Document