Title :
Upside down silicon camel diodes fabricated by low pressure CVD
Author :
Schmidt, G. ; Beneking, H.
Author_Institution :
Inst. fur Halbleitertech., Lehrstuhl I, RWTH Aachen, Germany
fDate :
6/6/1991 12:00:00 AM
Abstract :
By lowering the reaction temperature in an LPCVD system to 1053 K to a pressure of 21 Pa, inverted camel diodes with excellent DC properties have been grown. The n++p+n-n+ structures grown onto n+-Si substrates
Keywords :
elemental semiconductors; semiconductor diodes; semiconductor growth; silicon; vapour phase epitaxial growth; 1053 K; 21 Pa; DC properties; LPCVD system; Si camel diode; VPE; epitaxial growth; fabrication; inverted diode; low pressure CVD; n ++p +n -n + structures; n +-Si substrates; reaction temperature reduction; upside down diode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910674
