• DocumentCode
    1504114
  • Title

    Upside down silicon camel diodes fabricated by low pressure CVD

  • Author

    Schmidt, G. ; Beneking, H.

  • Author_Institution
    Inst. fur Halbleitertech., Lehrstuhl I, RWTH Aachen, Germany
  • Volume
    27
  • Issue
    12
  • fYear
    1991
  • fDate
    6/6/1991 12:00:00 AM
  • Firstpage
    1086
  • Lastpage
    1087
  • Abstract
    By lowering the reaction temperature in an LPCVD system to 1053 K to a pressure of 21 Pa, inverted camel diodes with excellent DC properties have been grown. The n++p+n-n+ structures grown onto n+-Si substrates
  • Keywords
    elemental semiconductors; semiconductor diodes; semiconductor growth; silicon; vapour phase epitaxial growth; 1053 K; 21 Pa; DC properties; LPCVD system; Si camel diode; VPE; epitaxial growth; fabrication; inverted diode; low pressure CVD; n ++p +n -n + structures; n +-Si substrates; reaction temperature reduction; upside down diode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910674
  • Filename
    76230
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1504114