Strained multiquantum well double heterostructure optoelectronic switch and associated heterojunction FET

The first operation of the double heterostructure optoelectronic switch (DOES) as an edge emitting, strained multiquantum well laser is reported. Excellent electrical switching parameters are obtained in broad area devices with lasing threshold current densities of 1.3 kA/cm² for 500 mu m long cavities. The associated heterojunction FET incorporated into the structure has been separately processed to give a g_m=65 mS/mm for a 2 mu m gate length, with V_th=+0.7 V. The simultaneous operation of both devices is essential for future optoelectronic integration.