DocumentCode :
1504192
Title :
GaAs vertical JFET operated in bipolar mode (GaAs BMFET)
Author :
Schweeger, G. ; Cocorullo, G. ; Della Corte, F.G. ; Hartnagel, H.L. ; Vitale, G. ; Spirito, P.
Author_Institution :
Inst. fur Hochfrequenztech., TH Darmstadt, Germany
Volume :
27
Issue :
12
fYear :
1991
fDate :
6/6/1991 12:00:00 AM
Firstpage :
1097
Lastpage :
1098
Abstract :
The first experimental results of current amplification in a vertical JFET on GaAs operated in the bipolar mode are presented. hfe as high as 30 has been measured at high current densities. The technology of this device is described and possible applications are discussed.
Keywords :
III-V semiconductors; amplification; gallium arsenide; junction gate field effect transistors; BMFET; GaAs; bipolar mode; current amplification; current densities; vertical JFET;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19910681
Filename :
76237
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1504192
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